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MBR4030PT - MBR4060PT
40A SCHOTTKY BARRIER RECTIFIER Features
* * * * * * *
Schottky Barrier Chip Guard Ring Die Construction for Transient Protection Low Power Loss, High Efficiency High Surge Capability High Current Capability and Low Forward Voltage Drop For Use in Low Voltage, High Frequency Inverters, Free Wheeling, and Polarity Protection Applications Lead Free Finish, RoHS Compliant (Note 3) Dim A B TO-3P Min 1.88 4.68 20.63 18.5 2.1 0.51 15.38 1.90 2.9AE 3.78 5.2 0.89 1.82 2.92 11.70 3/4 Max 2.08 5.36 22.38 21.5 2.4 0.76 16.25 2.70 3.65AE 4.50 5.7 1.53 2.46 3.23 12.84 6.10
H
A B
C D E G H J K L
S
J
C K L G
Mechanical Data
* * * * * * * *
Case: TO-3P Case Material: Molded Plastic. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020C Terminals: Finish - Bright Tin. Plated Leads Solderable per MIL-STD-202, Method 208 Polarity: As Marked on Body Ordering Information: See Last Page Marking: Type Number Weight: 5.6 grams (approximate)
R P N
Q
D
M N P Q R S
E M M
All Dimensions in mm @ TA = 25C unless otherwise specified
Maximum Ratings and Electrical Characteristics
Single phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%. Characteristic Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage RMS Reverse Voltage Average Rectified Output Current @ TC = 125C (Note 1) Non-Repetitive Peak Forward Surge Current 8.3ms Single half sine-wave superimposed on rated load (JEDEC Method) Forward Voltage Drop Peak Reverse Current at Rated DC Blocking Voltage Typical Total Capacitance Typical Thermal Resistance Junction to Case Voltage Rate of Change (Rated VR) Operating and Storage Temperature Range
Notes:
Symbol VRRM VRWM VR VR(RMS) IO IFSM VFM IRM CT RqJC dV/dt Tj, TSTG
MBR 4030PT 30 21
MBR 4035PT 35 24.5
MBR 4040PT 40 28 40
MBR 4045PT 45 31.5
MBR 4050PT 50 35
MBR 4060PT 60 42
Unit V V A A
400 0.70 0.60 1.0 100 1100 1.4 10,000 -65 to +150 0.80 0.70
@ IF = 20A, TC = 25C @ IF = 20A, TC = 125C @ TC = 25C @ TC = 125C (Note 2) (Note 1)
V mA pF C/W V/ms C
1. Thermal resistance junction to case mounted on heatsink. 2. Measured at 1.0MHz and applied reverse voltage of 4.0V DC. 3. RoHS revision 13.2.2003. Glass and High Temperature Solder Exemptions Applied, see EU Directive Annex Notes 5 and 7.
DS23019 Rev. 8 - 2
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MBR4030PT - MBR4060PT
a Diodes Incorporated
40
IF, INSTANTANEOUS FORWARD CURRENT (A)
50
100
I(AV), AVERAGE FORWARD CURRENT (A)
MBR 4030PT - MBR4045PT
10
MBR4050PT - MBR4060PT
30
20
1.0
10
0 0 50 100 150 TC, CASE TEMPERATURE (C) Fig. 1 Forward Current Derating Curve
0.1 0.2 0.9 0.8 0.3 0.4 0.6 0.7 0.5 VF, INSTANTANEOUS FORWARD VOLTAGE (V) Fig. 2 Typical Forward Characteristics (per element)
IFSM, PEAK FORWARD SURGE CURRENT (A)
400
8.3 ms Single half sine-wave (JEDEC method)
4000
TJ = 25C f = 1 Mhz
300
CT, CAPACITANCE (pF)
1000
200
100 1 100 10 NUMBER OF CYCLES AT 60Hz Fig. 3 Max Non-Repetitive Surge Current
10
100 0.1 1 10 100 VR, REVERSE VOLTAGE (V) Fig. 4 Typical Total Capacitance
TC = 125C
1.0
0.1
TC = 75C
0.01
TC = 25C
0.001 0 20 40 60 80 100
Tj = 25C
120
140
PERCENT OF RATED PEAK REVERSE VOLTAGE (%) Fig. 5 Typical Reverse Characteristics
DS23019 Rev. 8 - 2
2 of 3 www.diodes.com
MBR4030PT - MBR4060PT
Ordering Information
Device MBR4030PT MBR4035PT MBR4040PT MBR4045PT MBR4050PT MBR4060PT
Notes:
(Note 4) Packaging TO-3P TO-3P TO-3P TO-3P TO-3P TO-3P Shipping 30/Tube 30/Tube 30/Tube 30/Tube 30/Tube 30/Tube
4. For packaging details, visit our website at http://www.diodes.com/datasheets/ap02008.pdf.
DS23019 Rev. 8 - 2
3 of 3 www.diodes.com
MBR4030PT - MBR4060PT

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